IP3 2024 – Semiconductor Device (Lot 13734)
This patent is generally related to fabrication of a semiconductor device having a vertical tunnelling-junction of p-type graphene and n-type graphene to achieve excellent dynamic, electrical, and optical characteristics. Disclosed is a technique to fabricate a semiconductor device by doping a first doping type graphene and a second type graphene is disposed on the first graphene. The first graphene has a high resistive layer which is formed on a boundary surface between the first graphene and the second graphene. The technology may be implemented in light emitting devices, graphene semiconductor devices, solar cells, touch screens, etc.