IP3 2024 – Photoelectric Semiconductor Nanowire Device (Lot13835)

This invention is generally related to a semiconductor nanowire photoelectric device for controlling an electrical signal only with light. Disclosed is a photoelectric semiconductor nanowire device consisting of a semiconductor nanowire doped with a dopant of a first conductivity type. The system has crystal semiconductor segments with one porous semiconductor segment and connected to opposite ends of the porous semiconductor segment. Also disclosed is a first electrode and a second electrode disposed in the crystal semiconductor segments around the porous semiconductor segment to provide an electrical connection. The semiconductor nanowire provides current, based on intensity of an external light when the external light is irradiated to the porous semiconductor segment. The technology may be implemented in MOSFETs, electrochemical sensing device, nanowire lasers, etc.