Nanostructure related technologies (DEAL 663)

This portfolio is generally related to a technique of forming nanowhiskers, manufacturing of semiconductor nanowire wrap insulating gate field effect transistor (WIGFET) and manufacturing of semiconductor devices using nitride semiconductor nanowires. Few patents in the portfolio disclose a technique to manufacture a wrap insulating gate field effect transistor to reduce the impact ionization rate of the transistor, to improve the on/off current characteristics, and to reduce the effects of drain-induced barrier lowering. Further disclosed is a Gallium Nitride (GaN) nanowire having superior properties such as high electron mobility, excellent thermal stability, and strong mechanical strength used in RF amplifiers and 5G communication. The technology may be implemented in electronics, optoelectronics, sensors, low-power IoT devices, 5G, 6G, biosensors, etc.