IP3 2025 – Semic Fabrication 5 (Lot 16850)

This lot is generally related to a vertical Schottky barrier diode (SBD) that utilizes a two-dimensional (2D) layered semiconductor, enabling compact integration and shorter carrier transit paths for faster switching speeds. This makes it useful in high-frequency applications such as RF communication and fast logic circuits. Disclosed is a vertical Schottky barrier diode that uses a 2D- layered semiconductor made of transition metal dichalcogenides (TMDs), which is stacked between a metallic ohmic contact layer and a Schottky contact layer. Also disclosed is a non-conductive member placed at the edges to enhance junction stability. The TMD layer has a thickness of 10 nm or more, and the Schottky contact is limited to areas directly above the ohmic contact to improve precision and efficiency. The technology may be implemented in flexible wearable electronic devices, high-frequency RF circuits, low-power IoT devices, etc.