IP3 2025 – Semic Fabrication 3 (Lot 16537)

This lot is generally related to a technique for the fabrication of semiconductors using two-dimensional (2D) large-area growth of chalcogen compounds for the manufacturing of next-generation electronics. Techniques are disclosed to deposit a thin film of a transition metal such as molybdenum (Mo) or tungsten (W) onto a substrate. A vapor-phase chalcogen source, such as a vaporized chalcogen element such as sulfur or selenium, or a chalcogen precursor, is then introduced and allowed to diffuse uniformly through the metal film to ensure even distribution of the chalcogen within the film. The post-heating film triggers a solid-state reaction that forms a uniform, crystalline chalcogen compound layer with high precision and quality. The technology may be implemented in transistors, integrated circuits, sensors, photodetectors, memory storage systems, etc.