IP3 2025 – Semic Fabrication 2 (Lot 16401)

This lot is generally related to a spin-orbit torque-based switching device consisting of a spin torque generating layer composed of a tungsten (W) thin film and a tungsten-vanadium (W-V) alloy thin film stacked between the tungsten film and a magnetization-free layer. The layered structure enables efficient spin-orbit torque generation and allows for the manipulation of the magnetization state of the free layer for switching operations to provide enhanced spin current generation and torque efficiency due to the W-V alloy and improved thermal and structural stability for device integration. The technology may be implemented in spintronic memory devices, SOT-MRAMs, high-speed non-volatile memory, neuromorphic computing systems, etc.