IP3 2025 – Semic Fabrication 1 (Lot 16175)

This lot is generally related to a technique to manufacture integrated optical devices and optical interconnection devices on a bulk-silicon (Si) substrate by using germanium (Ge) or silicon-germanium (SiGe) materials having a higher refractive index and enabling the formation of efficient waveguides, modulators, photodetectors directly on the Si platform. Disclosed is the manufacturing of an optical interconnection device consisting of a first element layer on a substrate, a second element layer above it that receives optical signals, and a mode converter positioned between them. The mode converter adjusts the optical signal so that the effective refractive indices and mode profiles of the two layers match and allows efficient light transfer. The components are arranged in separate layers with the mode converter partially overlapping the first and the second element layers to ensure smooth signal transition. The technology may be implemented in high-speed data communication systems, photonic integrated circuits (PICs), modulators, detectors, sensitive quantum photonic devices, optical transceivers, etc.