IP3 2025 – Nanoscale Material (Lot 16758)

This lot is generally related to a technique to prepare a heterojunction material by layering two different transition metals on a substrate to enable precise control over material composition and enhance electronic and optoelectronic performance. Disclosed is a technique to prepare a heterojunction material by first depositing a layer of a transition metal on a substrate, followed by a second layer that is a different transition metal from the first layer. The system applies a plasma process with a chalcogen source, such as sulfur, selenium, or tellurium, and converts the two metals into their respective transition metal chalcogenides to produce a stacked heterojunction with distinct material properties. The technology may be implemented in next-generation transistors, 2D semiconductor devices, photodetectors, optoelectronic components, wearable electronics, biosensors, etc.