Plasma etching method (DEAL 664)

This invention is generally related to a semiconductor fabrication system used to precisely remove material from the surface of a substrate. Disclosed is a plasma etching technique that supplies heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas, and oxygen (O2) gas to a plasma chamber to get an etching target. The plasma chamber is connected to a canister having heptafluoropropyl methyl ether (HFE) in a liquid phase by a chamber connecting line, and the HFE gas is generated by heating the canister at a temperature higher than the boiling point of the HFE. Also disclosed that the chamber is heated by a connecting line at a second temperature higher than the first temperature, and the generated HFE gas is supplied to the plasma chamber through the chamber connecting line. The technology may be implemented in integrated circuits (ICs), small semiconductor devices, etc.